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Lamp Annealing System for Speedy Thermal Processing RLA-3100

The system for 4- to 8-inch wafers performs activation and oxidation in a vacuum (LP) environment and N2 load-lock atmosphere. The upper and lower cross lamps (halogen) and a soaking system are used, for higher in-plane temperature distribution uniformity.
Lamp Annealing System for Speedy Thermal Processing RLA-3100

Feature

  • 4 to 8 inch wafer size is available
  • Multi axis clean robot enables high speed and accurate wafer transfer
  • Max 50 wafers continuous processing is available
  • Equipped with operator friendly high performance control system
  • Vacuum designed quartz tube enables accurate gas substitution and process at vacuum pressure

The lamp annealing system can process a maximum of 50 4-inch to 8-inch wafers through high-speed heating at 200°C/sec. The upper and lower cross halogen lamps achieve superior uniform in-plane temperature distribution. Thanks to the quartz tube designed to be resistant to vacuum, wafers can be processed in a clean vacuum (LP) environment and N2 load lock atmosphere.

Outer dimension (mm) 900(W)×1850(D)×2500(H)
Operation temperature 400~1200°C
Heat up rate Max.200°C/sec
Lamp layout Upper & lower cross lamp arrays
Number of control zone 6
Wafer size 4~8 inch
I/O port 2
Wafer transfer single wafer / multi-axis clean robot
Controller Model RSC1000
Options acuum system, HOST communication(HSMS/GEM)
Applications Annealing, Oxidation
Manufactured article 4~8 inch wafer